? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 150 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 150 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 340 a i ar t c = 25 c60a e ar t c = 25 c80mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 175 c, r g = 4 ? p d t c = 25 c 714 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-3p 5.5 g to-264 10 g g = gate d = drain s = source tab = drain ds99299(01/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 175 c 500 a r ds(on) v gs = 10 v, i d = 0.5 i d25 13 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet advanced technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-264(sp) (ixtk) g d s (tab) to-3p (ixtq) g d s d (tab) v dss = 150 v i d25 = 150 a r ds(on) 13 m ? ? ? ? ? ixtq 150n15p ixtk 150n15p
ixtk 150n15p ixtq 150n15p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 55 80 s c iss 5800 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1730 pf c rss 400 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 33 ns t d(off) r g = 3.3 ? (external) 100 ns t f 28 ns q g(on) 190 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 105 nc r thjc 0.21 k/w r thck to-3p 0.21 k/w r thck to-264 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 150 a i sm repetitive 340 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 150 ns -di/dt = 100 a/ s q rm v r = 100 v 2.3 c 1 2 3 to-3p outline to-264 outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 dim. ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved ixtk 150n15p ixtq 150n15p fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 330 012345678910 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 30 60 90 120 150 012 345 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 30 60 90 120 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v d s - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r d s ( o n ) - normalize d i d = 150a i d = 75a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 0 50 100 150 200 250 300 350 i d - amperes r d s ( o n ) - normalized t j = 25 o c v gs = 10v t j = 175 o c v gs = 15v
ixtk 150n15p ixtq 150n15p fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 75v i d = 75a i g = 10ma fig. 7. input admittance 0 25 50 75 100 125 150 175 200 225 250 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 175 200 225 250 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 175 o c t c = 25 o c r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved ixtk 150n15p ixtq 150n15p fig. 13. m axim um trans ie nt the rm al re s is tance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w
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